Self-limiting silicide in highly scaled fin technology

ABSTRACT

A method of forming a metal semiconductor alloy on a fin structure that includes forming a semiconductor material layer of a polycrystalline crystal structure material or amorphous crystal structure material on a fin structure of a single crystal semiconductor material, and forming a metal including layer on the semiconductor material layer. Metal elements from the metal including layer may then be intermixed metal elements with the semiconductor material layer to provide a metal semiconductor alloy contact on the fin structure. A core of the fin structure of the single crystal semiconductor material is substantially free of the metal elements from the metal including layer.

BACKGROUND

1. Technical Field

The present disclosure relates to semiconductor devices, such assemiconductor devices including fin structures. The present disclosurefurther relates to processing of materials suitable for use in finincluding structures.

2. Description of the Related Art

The dimensions of semiconductor field effect transistors (FETs) havebeen steadily shrinking over the last thirty years or so, as scaling tosmaller dimensions leads to continuing device performance improvements.Planar FET devices typically have a conducting gate electrode positionedabove a semiconducting channel, and electrically isolated from thechannel by a thin layer of gate oxide. Current through the channel iscontrolled by applying voltage to the conducting gate. With conventionalplanar FET scaling reaching fundamental limits, the semiconductorindustry is looking at more unconventional geometries that willfacilitate continued device performance improvements. One such class ofdevice is a fin field effect transistor (finFET).

SUMMARY

In one aspect, a method is disclosed for forming a metal semiconductoralloy on a fin structure that includes forming a semiconductor materiallayer of a polycrystalline crystal structure material or amorphouscrystal structure material on a fin structure of a single crystalsemiconductor material. A metal including layer may be formed on thesemiconductor material layer of the polycrystalline crystal structurematerial or amorphous crystal structure material. Metal elements fromthe metal including layer may then be intermixed with the semiconductormaterial layer to provide a metal semiconductor alloy contact on the finstructure. The core of the fin structure of the single crystalsemiconductor material is substantially free of the metal elements fromthe metal including layer.

In another embodiment, a method of forming a metal semiconductor alloyon a fin structure is provided that includes forming a gate structure ona channel portion of the fin structure, and forming a semiconductormaterial layer of a polycrystalline crystal structure material oramorphous crystal structure material on source and drain regionsportions of the fin structure. The source and drain region portions ofthe fin structure are composed of a single crystal semiconductormaterial. A metal including layer is formed on the semiconductormaterial layer. Metal elements from the metal including layer areintermixed with the semiconductor material layer to provide a metalsemiconductor alloy contact on the fin structure. A core of the finstructure of the single crystal semiconductor material is substantiallyfree of the metal elements from the metal including layer.

In another aspect, a semiconductor device is provided that includes afin structure comprising a source region, a drain region and a channelregion. The channel region of the fin structure is between the sourceregion and the drain region. At least the source region and the drainregion of the fin structure have a width of 10 nm or less and arecomprised of a single crystalline semiconductor including material. Agate structure is present on the channel region of the fin structure.Metal semiconductor alloy contacts are present on the source region andthe drain region of the fin structure. Metal elements from the metalsemiconductor alloy contacts are not substantially present in the sourceregion and the drain region of the fin structure.

BRIEF DESCRIPTION OF DRAWINGS

The following detailed description, given by way of example and notintended to limit the disclosure solely thereto, will best beappreciated in conjunction with the accompanying drawings, wherein likereference numerals denote like elements and parts, in which:

FIG. 1 is a perspective view that depicts forming at least two finstructures of single crystalline semiconductor material from asemiconductor on insulator (SOI) substrate, in accordance with oneembodiment of the present disclosure.

FIG. 2 is a perspective view depicting forming a sacrificial gatestructure on a channel region portion of the fin structures, inaccordance with one embodiment of the present disclosure.

FIG. 3 is a perspective view depicting one embodiment of selectivelygrowing in-situ doped amorphous or polycrystalline semiconductormaterial on the fin structures, in accordance with the presentdisclosure.

FIG. 4 is a perspective view depicting of depositing a metal layer onthe in-situ doped amorphous or polycrystalline semiconductor material,in accordance with one embodiment of the present disclosure.

FIG. 5 is a perspective view depicting one embodiment of intermixing themetal element from the metal layer and the semiconductor element fromthe in-situ doped amorphous or polycrystalline semiconductor material toform a metal semiconductor alloy, in accordance with the presentdisclosure.

FIG. 6 is a perspective view of forming a functional gate structure onthe channel region portion of the fin structure, in accordance with oneembodiment of the present disclosure.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

Detailed embodiments of the claimed structures and methods are disclosedherein; however, it is to be understood that the disclosed embodimentsare merely illustrative of the claimed structures and methods that maybe embodied in various forms. In addition, each of the examples given inconnection with the various embodiments are intended to be illustrative,and not restrictive. Further, the figures are not necessarily to scale,some features may be exaggerated to show details of particularcomponents. Therefore, specific structural and functional detailsdisclosed herein are not to be interpreted as limiting, but merely as arepresentative basis for teaching one skilled in the art to variouslyemploy the methods and structures of the present disclosure. Forpurposes of the description hereinafter, the terms “upper”, “lower”,“right”, “left”, “vertical”, “horizontal”, “top”, “bottom”, andderivatives thereof shall relate to the embodiments of the disclosure,as it is oriented in the drawing figures. The terms “positioned on”means that a first element, such as a first structure, is present on asecond element, such as a second structure, wherein interveningelements, such as an interface structure, e.g. interface layer, may bepresent between the first element and the second element. The term“direct contact” means that a first element, such as a first structure,and a second element, such as a second structure, are connected withoutany intermediary conducting, insulating or semiconductor layers at theinterface of the two elements. As used herein, “semiconductor device”refers to an intrinsic semiconductor material that has been doped, thatis, into which a doping agent has been introduced, giving it differentelectrical properties than the intrinsic semiconductor. Doping involvesadding dopant atoms to an intrinsic semiconductor, which changes theelectron and hole carrier concentrations of the intrinsic semiconductorat thermal equilibrium. Dominant carrier concentration in an extrinsicsemiconductor determines the conductivity type of the semiconductor. Afield effect transistor (FET) is a semiconductor device in which outputcurrent, i.e., source-drain current, is controlled by the voltageapplied to a gate structure to the semiconductor device. A field effecttransistor has three terminals, i.e., gate structure, source region anddrain region. As used herein, a “fin structure” refers to asemiconductor material, which is employed as the body of a semiconductordevice, in which the gate structure is positioned around the finstructure such that charge flows down the channel on the two sidewallsof the fin structure and optionally along the top surface of the finstructure. A finFET is a semiconductor device that positions the channelregion of the semiconductor device in a fin structure.

In some embodiments, the methods and structures disclosed herein providea wrap-around metal semiconductor alloy, e.g., silicide, that is formedon the fin structures of fin including semiconductor devices, whereinthe wrap around silicide is formed in a self-limiting manner. In a 10 nmfin field effect transistor (finFET), the fin has a thickness of about 8nm, when the pitch defining the spacing between adjacent fin structuresis on the order of 40 nm or less. In some instances, conventionalepitaxial merge structures that are formed between fin structures havingdimensions similar to those provide in the above example may not have asufficient contact area for optimum device performance. Typically,wrap-around contacts composed of metal semiconductor alloy, e.g.,silicide, to fin structures increase the metal semiconductor alloy,e.g., silicide, to fin area, and can therefore reduce contactresistance. However, it has been determined that the drawback of a metalsemiconductor alloy, e.g., silicide, wrap around contact on a narrow finstructure, such as fin structures having the above described dimensions,is that the formation of the metal semiconductor alloy may consume theentirety of the semiconductor material in the fin structure. Forexample, when forming a nickel silicide wrap around contacts onto a thinsilicon fin structure, the high diffusion rate of nickel in silicon canresult in the entire fin structure being converted to nickel silicide.It has been determined that if the entirety of the fin structure isconverted to a metal semiconductor alloy, such as a silicide, thecontact area for the metal semiconductor alloy to silicon semiconductormaterial of the fin structure is actually reduced, which results in anincreased contact resistance. In some embodiments, the aforementioneddisadvantages are overcome by a method that forms a self-limiting metalsemiconductor alloy as a wrap-around contact to a fin structure. In someexamples, the self-limiting characteristic of the metal semiconductoralloy, e.g., silicide, that is formed on the fin structure is providedby an epitaxial type deposition process that forms an in situ dopedpolycrystalline or amorphous semiconductor material on a single crystalsemiconductor material. In some examples, the presence of the in situdoped polycrystalline or amorphous semiconductor material on the singlecrystal semiconductor material of the fin structure obstructs the metalelements from the metal materials used to form metal semiconductor alloycontacts from reaching the core of the fin structure that is composed ofthe he single crystal semiconductor material. The methods and structuresof the present disclosure are now discussed with more detail referringto FIGS. 1-6.

FIG. 1 depicts one embodiment of forming a plurality of fin structures10. In some embodiments, the fin structures 10 may be formed from asemiconductor on insulator (SOI) substrate or a bulk semiconductorsubstrate. In the embodiments that utilize an SOI substrate, the SOIsubstrate may include at least a semiconductor on insulator (SOI) layeroverlying a dielectric layer, in which a base semiconductor layer may bepresent underlying the dielectric layer. In this example, the SOI layeris processed to provide the fin structure 10, the dielectric layerprovides the isolation regions 15 that provide isolation betweenadjacent fin structures 10, and the base semiconductor layer providesthe supporting substrate 5, as depicted in FIG. 1. The fin structures 10may be formed from the SOI substrate, using photolithography and etchprocesses. In one example, the fin structures 10 may be formed from theSOI layer of an SOI substrate using sidewall image transfer (SIT)techniques. The etch process for forming the fin structures 10 may be ananisotropic etch, such as reactive ion etch, that etches through theentire thickness of the SOI layer stopping on the dielectric layer. Forexample, the etch process for forming the fin structures from the SOIlayer of the SOI substrate may be selective to the dielectric layer,i.e., buried insulating layer, of the SOI substrate.

In the embodiments that utilize a bulk substrate to provide the finstructures 10, the fin structures 10 may be formed usingphotolithography and etch processes. For example, an etch mask may beformed on the upper surface of the bulk substrate, in which the portionsof the bulk substrate that are exposed by the etch mask may be etched toform trenches. The etch process may be included within an sidewall imagetransfer (SIT) process flow. The trenches separate the portions of thebulk substrate that the etch mask is protecting, wherein the portions ofthe bulk substrate that are protected by the etch mask provide the finstructures 10. At least a portion of the trenches may then be filledwith a dielectric material, such as an oxide, nitride or oxynitride, toprovide the isolation regions 15 that separate the adjacent finstructures 10, as depicted in FIG. 1. In this embodiment, an unetchedportion of the bulk substrate that is present underlying the finstructures 10 provides the supporting substrate 5. In anotherembodiment, the bulk substrate provides the supporting substrate 5 thatis depicted in FIG. 1, and the material layers that provide theisolation regions 15 and the fin structures 10 are deposited onto thebulk substrate, or the material layers that provide the isolationregions 15 and the fin structures 10 are transferred onto the bulksubstrate. The material layer for the fin structures 10 may then bepatterned and etched to provide the fin structures 10.

In some embodiments, the fin structures 10 may be composed of a type IVsemiconductor material or a compound semiconductor material. By “type IVsemiconductor” it is meant that the semiconductor material includes atleast one element from Group IVA (i.e., Group 14) of the Periodic Tableof Elements. Examples of type IV semiconductor materials that aresuitable for the fin structure include silicon (Si), germanium (Ge),silicon germanium (SiGe), silicon doped with carbon (Si:C), silicongermanium doped with carbon (SiGe:C) and a combination thereof. Acompound semiconductor may be a III-V semiconductor material or a typeII/VI semiconductor material. By “III-V semiconductor material” it ismeant that the semiconductor material includes at least one element fromGroup IIIA (i.e., Group 13) of the Periodic Table of Elements and atleast one element from Group VA (i.e., Group 15) of the Periodic Tableof Elements. Examples of compound semiconductor materials that aresuitable for the fin structures 10 include at least one of aluminumantimonide (AlSb), aluminum arsenide (AlAs), aluminum nitride (AlN),aluminum phosphide (AlP), gallium arsenide (GaAs), gallium phosphide(GaP), indium antimonide (InSb), indium arsenic (InAs), indium nitride(InN), indium phosphide (InP), aluminum gallium arsenide (AlGaAs),indium gallium phosphide (InGaP), aluminum indium arsenic (AlInAs),aluminum indium antimonide (AlInSb), gallium arsenide nitride (GaAsN),gallium arsenide antimonide (GaAsSb), aluminum gallium nitride (AlGaN),aluminum gallium phosphide (AlGaP), indium gallium nitride (InGaN),indium arsenide antimonide (InAsSb), indium gallium antimonide (InGaSb),aluminum gallium indium phosphide (AlGaInP), aluminum gallium arsenidephosphide (AlGaAsP), indium gallium arsenide phosphide (InGaAsP), indiumarsenide antimonide phosphide (InArSbP), aluminum indium arsenidephosphide (AlInAsP), aluminum gallium arsenide nitride (AlGaAsN), indiumgallium arsenide nitride (InGaAsN), indium aluminum arsenide nitride(InAlAsN), gallium arsenide antimonide nitride (GaAsSbN), gallium indiumnitride arsenide aluminum antimonide (GaInNAsSb), gallium indiumarsenide antimonide phosphide (GaInAsSbP), and combinations thereof.

The fin structures 10 typically have a single crystal crystallinestructure. The term “single crystalline” denotes a crystalline solid, inwhich the crystal lattice of the entire sample is substantiallycontinuous and substantially unbroken to the edges of the sample, withsubstantially no grain boundaries. For example, when the fin structure10 is composed of silicon, the fin structure 10 may be composed ofmonocrystalline silicon.

Still referring to FIG. 1, each of the fin structures 10 may have aheight H₁ ranging from 5 nm to 200 nm. In another embodiment, each ofthe fin structures 10 has a height H₁ ranging from 10 nm to 100 nm. Inone example, each of the fin structures 10 has a height H₁ ranging from20 nm to 50 nm. Each of the fin structures 10 may have a width W₁ ofless than 15 nm. In another embodiment, each of the fin structures 10has a width W₁ ranging from 3 nm to 8 nm. Although two fin structures 10are depicted in FIG. 1, the present disclosure is not limited to onlythis example. It is noted that any number of fin structures 10 may beemployed in accordance with the present disclosure. The pitch P1separating adjacent fin structures 10 may range from 10 nm to 500 nm. Inanother example, the pitch P1 separating adjacent fin structures 10 mayrange from 20 nm to 50 nm.

The isolation region 15 may be composed of any dielectric material. Forexample, the isolation region 15 may be composed of an oxide, nitride oroxynitride material. In one example, when the isolation region 15 iscomposed of an oxide, the oxide may be silicon oxide. In anotherexample, when the isolation region 14 is composed of a nitride, thenitride may be silicon nitride.

The supporting substrate 5 may be composed of a semiconductor material,dielectric or glass. For example, the supporting substrate 5 may becomposed of at least one of silicon, a silicon carbon alloy (e.g.,silicon doped with carbon (Si:C), silicon germanium (SiGe), a silicongermanium and carbon alloy (e.g., silicon germanium doped with carbon(SiGe:C), silicon alloys, germanium, germanium alloys, gallium arsenic,indium arsenic, indium phosphide, as well as other III/V and II/VIcompound semiconductors.

FIG. 2 is a perspective view depicting forming a gate structure on achannel region portion of the fin structures. In the embodiment that isdepicted in FIG. 2, the gate structure is a sacrificial gate structurethat is a component of a replacement gate process for forming asemiconductor device. In a replacement gate process, a sacrificial gatestructure is first formed on a channel region of the semiconductordevice, wherein the sacrificial gate structure dictates the size andgeometry of a later formed functional gate structure. By “sacrificial”it is meant that the structure is present during processing of thesemiconductor device, but is removed from the semiconductor device priorto the device being completed. The “functional gate structure” operatesto switch the semiconductor device from an “on” to “off” state, and viceversa.

In one embodiment, the sacrificial material that provides thesacrificial gate structure 20 may be composed of any material that canbe etched selectively to the fin structures 10′. In some embodiments,the sacrificial gate structure 20 may include a sacrificial gateelectrode 21 and a sacrificial gate cap 22. The layered structure of thesacrificial gate electrode 21 and the sacrificial gate cap 22 may beemployed to facilitate selective deposition and selective etch processthat are employed in later stages of the process flow for forming thesemiconductor device. In one embodiment, the sacrificial gate electrode21 of the sacrificial gate structure 20 may be composed of asilicon-including material, such as polysilicon. In one embodiment, thesacrificial gate cap 22 may be composed of a dielectric material, suchas an oxide, nitride or oxynitride material, or amorphous carbon. Thesacrificial gate structure 20 may be formed using deposition (e.g.,chemical vapor deposition) photolithography and etch processes (e.g.,reactive ion etching) to provide the sacrificial gate structure 20.

Still referring to FIG. 2, following formation of the sacrificial gatestructure 20, a gate sidewall spacer 23 may be formed on the sidewallsof the sacrificial gate structure 20. The gate sidewall spacer 23 may becomposed of a dielectric material, such as an oxide, nitride oroxynitride material. For example, the gate sidewall spacer 23 may becomposed of silicon oxide (SiO₂) or silicon nitride (Si₃N₄). In oneembodiment, the gate sidewall spacer 23 may be formed by using a blanketlayer deposition, such as chemical vapor deposition (CVD), and ananisotropic etchback method. The gate sidewall spacer 23 may have awidth ranging from 2.0 nm to 15.0 nm.

In some embodiments, after forming the sacrificial gate structure 20,the exposed portions of the fin structure 10, which are the source anddrain region portions of the fin structure 10, may be doped with ann-type or p-type dopant. As used herein, the term “drain” means a dopedregion in semiconductor device located at the end of the channel region,in which carriers are flowing out of the transistor through the drain.The term “source” is a doped region in the semiconductor device, inwhich majority carriers are flowing into the channel region. The channelregion is the region underlying the gate structure and between thesource and drain of a semiconductor device that becomes conductive whenthe semiconductor device is turned on. The dopant type indicates theconductivity type of the source and drain region portions of the finstructure 10. As used herein, “p-type” refers to the addition ofimpurities to an intrinsic semiconductor that creates deficiencies ofvalence electrons. In a type IV semiconductor materials, such as asilicon including fin structure 10, examples of n-type dopants, i.e.,impurities, include but are not limited to: boron, aluminum, gallium andindium. As used herein. “n-type” refers to the addition of impuritiesthat contributes free electrons to an intrinsic semiconductor. In a typeIV semiconductor, such as a silicon including fin structure 10, examplesof n-type dopants, i.e., impurities, include but are not limited toantimony, arsenic and phosphorous. In some embodiments, the source anddrain region portions of the fin structure 10 may be implanted withn-type or p-type dopant using ion implantation or gas phase doping. Inother examples, a material layer that is doped with n-type or p-typedopant may be formed on the source and drain region portions of the finstructure, and the dopant may be driven from the doped material in tothe fin structure 10 by thermal diffusion.

FIG. 3 depicts one embodiment of selectively growing in-situ dopedamorphous or polycrystalline semiconductor material 25 on the finstructures 10. More specifically, the in situ doped amorphous orpolycrystalline semiconductor material 25 is formed on the exposedsurfaces of the source and drain region portions of the fin structures10 that are not covered by the gate sidewall spacer 23 or thesacrificial gate structure 20. As used herein, the term “amorphous”denotes a non-crystalline material that lacks the long-range ordercharacteristic of a crystal. As used herein, the term “polycrystalline”denotes a form of semiconductor material made up of randomly orientedcrystallites and including large-angle grain boundaries, twin boundariesor both. Multi-crystalline is widely referred to a polycrystallinematerial with large grains (of the order of millimeters to centimeters).Other terms used are large-grain polycrystalline, or large-grainmulti-crystalline. The term polycrystalline typically refers to smallgrains (hundreds of nanometers, to hundreds of microns).

The in situ doped amorphous or polycrystalline semiconductor material 25may be deposited using an epitaxial type deposition process on asemiconductor material having a single crystal crystalline structure,wherein the amorphous or polycrystalline crystal structure of thedeposited material is provided by flowing the in situ dopant gas, e.g.,n-type or p-type dopant gas, to the deposition surface prior tointroducing the gas source for providing the base material, e.g., typeIV semiconductor base material or compound semiconductor base material.By “in-situ” it is meant that the dopant e.g., n-type or p-type, that isbeing introduced to the base material, e.g., type IV semiconductor orcompound semiconductor material, of the amorphous or polycrystallinesemiconductor material 25 is introduced during the deposition step thatforms the amorphous or polycrystalline semiconductor material 25.Typically, epitaxial deposition processing results in a semiconductormaterial having a crystalline structure that is the same as thedeposition surface. For example, a conventionally epitaxially depositedmaterial that is formed on a deposition surface composed of a singlecrystal semiconductor material will typically have a single crystallinecrystal structure. In the present disclosure, it has been determinedthat by flowing the dopant gas for the in situ dopant to the source anddrain region portions of the fin structure 10 having a single crystalcrystalline structure, prior to flowing the source gas for the basematerial of being deposited material to the fin structure, thecrystalline structure of the material being epitaxially deposited can becontrolled so that the deposited material has an amorphous crystalstructure or a polycrystalline crystal structure.

The amorphous or polycrystalline semiconductor material 25 may becomposed of a type IV semiconductor material, such as a siliconincluding semiconductor or a germanium semiconductor, or a compoundsemiconductor material, such as type III-V semiconductor material ortype II-VI semiconductor material. The amorphous or polycrystallinesemiconductor material 25 may have the same composition as the finstructures 10 or a different composition from the fin structures 10. Theabove description of the material compositions that are suitable for thefin structures 10 are suitable for the description of the materialcompositions that may be used for the amorphous or polycrystallinesemiconductor material 25. For example, when the amorphous orpolycrystalline semiconductor material 25 is composed of a type IVsemiconductor, the amorphous or polycrystalline semiconductor material25 may be a silicon including material, such as amorphous silicon orpolycrystalline silicon.

The amorphous or polycrystalline semiconductor material 25 is formed onthe source and drain region portions of the fin structures 10 using aselective deposition process. In one embodiment, the selectivedeposition process provides that the material being deposited will formon one material surface, such as a semiconductor surface, but will notform on other material surfaces, such as dielectric and/or metalsurfaces. For example, the deposition process for forming the amorphousor polycrystalline semiconductor material 25 may provide that amorphousor polycrystalline semiconductor material 25 is formed directly on theexposed semiconductor surfaces of the fin structure 10, but is notformed on the dielectric surfaces of the sacrificial gate cap 22 and/orthe gate sidewall spacer 23.

The amorphous or polycrystalline semiconductor material 25 may be formedon the exposed upper surfaces and sidewall surfaces of the fin structure10. In some examples, the amorphous or polycrystalline semiconductormaterial 25 is formed by a conformal deposition method, so that thethickness of the amorphous or polycrystalline semiconductor material 25on the sidewall surface of the fin structure 10 is substantially thesame as the thickness of the amorphous or polycrystalline semiconductormaterial 25 on the upper surface of the fin structure 10. The term“conformal” denotes a layer having a thickness that does not deviatefrom greater than or less than 30% of an average value for the thicknessof the layer. In one embodiment, the thickness of the amorphous orpolycrystalline semiconductor material 25 may range from 2 nm to 20 nm.In another embodiment, the thickness of the amorphous or polycrystallinesemiconductor material 25 may range from 3 nm to 10 nm. It is noted thatthe above description for the thickness of the amorphous orpolycrystalline semiconductor material 25 is provided for illustrativepurposes only, and is not intended to limit the present disclosure, asother thicknesses have also been contemplated for use herein.

The amorphous or polycrystalline semiconductor material may be depositedusing a chemical vapor deposition (CVD) method. Chemical vapordeposition (CVD) is a deposition process in which a deposited species isformed as a result of chemical reaction between gaseous reactants atgreater than room temperature (25° C. to 900° C.); wherein solid productof the reaction is deposited on the surface on which a film, coating, orlayer of the solid product is to be formed. Variations of CVD processesinclude, but not limited to, Atmospheric Pressure CVD (APCVD). LowPressure CVD (LPCVD) and Plasma Enhanced CVD (PECVD), Metal-Organic CVD(MOCVD) and combinations thereof may also be employed.

A number of different sources may be used for the amorphous orpolycrystalline semiconductor material 25. In some embodiments, the gassource for the deposition of a silicon including material, such aspolysilicon, is selected from the group consisting of silane, disilane,trisilane, tetrasilane, hexachlorodisilane, tetrachlorosilane,dichlorosilane, trichlorosilane, methylsilane, dimethylsilane,ethylsilane, methyldisilane, dimethyldisilane, hexamethyldisilane andcombinations thereof. When the amorphous or polycrystallinesemiconductor material 25 includes germanium, the germanium gas sourcemay be selected from the group consisting of germane, digermane,halogermane, dichlorogermane, trichlorogermane, tetrachlorogermane andcombinations thereof. It is noted that the above gas sources areprovided for illustrative purposes only and are not intended to limitthe present disclosure. Other gas sources for forming the base materialof the amorphous or polycrystalline semiconductor material 25, so longas they provide a semiconductor material having an amorphous orpolycrystalline semiconductor material.

The amorphous or polycrystalline semiconductor material 25 is formedusing an in situ doping method. In one embodiment, the n-type dopant gassource may include arsine (AsH₃), phosphine (PH₃) and alkylphosphines,such as with the empirical formula R_(x)PH_((3-x)), where R=methyl,ethyl, propyl or butyl and x=1, 2 or 3. Alkylphosphines suitable for usewith the present disclosure include trimethylphosphine ((CH₃)₃P),dimethylphosphine ((CH₃)₂PH), triethylphosphine ((CH₃CH₂)₃P) anddiethylphosphine ((CH₃CH₂)₂PH). The p-type dopant gas source may includediborane (B₂H₆).

As indicated above, the amorphous or polycrystalline crystal structureof the deposited material, e.g., silicon and/or silicon germanium, maybe provided by flowing the dopant gas source prior to flowing the sourcegas for the base material of the epitaxial deposition process. Morespecifically, in one example, the in situ doping gas of at least one ofdiborane (B₂H₆), arsine (AsH₃) and phosphine (PH₃) is flowed prior tothe selective epitaxial deposition process that employs the epitaxialdeposition gas source for forming the base material, e.g., silane, ofthe semiconductor material being deposited. Without wishing to be bound,but in the interest of further explaining some aspects of the presentdisclosure, the flow of the in situ dopant gas impacts the depositionsurface, and may form a monolayer or multiple monolayers of the dopantmaterial. This can obstruct, e.g., destroy, the lattice information ofthe underlying semiconductor lattice, e.g., silicon lattice, of the fincore. Material that is grown on top of the fin core will not find alattice to arrange their growth onto. Therefore, the depositedsemiconductor grows on the fin structure having an amorphous orpoly-crystalline crystal structure. Additionally, the dopant monolayercan function as an additional stopping layer (also referred to asdiffusion barrier) for obstructing the diffusion of metal elements fromreaching the core of the fin structure during the subsequently describedformation of the metal semiconductor alloy. In yet another embodiment,the dopant monolayer can help to provide for a good electrical contactbetween the subsequently formed metal semiconductor alloy and the coreof the fin structure 10.

In some embodiments, the dopant concentration of n-type or p-type dopantthat is present in the amorphous or polycrystalline semiconductormaterial 25 may range from 1×10¹⁸ atoms/cm³ to 1×10²² atoms/cm³. Inanother embodiment, the concentration of n-type or p-type dopant that ispresent in the amorphous or polycrystalline semiconductor material 25may range from 5×10¹⁹ atoms/cm³ to 4×10²¹ atoms/cm³. In yet anotherembodiment, the concentration of n-type or p-type dopant that is presentin the amorphous or polycrystalline semiconductor material 25 may rangefrom 1×10²⁰ atoms/cm³ to 1×10²¹ atoms/cm³.

FIG. 4 depicts one embodiment of depositing a metal including layer 30on the in-situ doped amorphous or polycrystalline semiconductor material25. The metal including layer 30 may be composed of nickel (Ni),titanium (Ti), cobalt (Co), platinum (Pt), tantalum (Ta), tungsten (W),palladium (Pd) and other like materials. The metal including layer 30 istypically deposited using a physical vapor deposition (PVD) method, suchas evaporation, plating, electroplating, sputtering, electrochemicaldeposition and combinations thereof. Examples of sputtering apparatusthat may be suitable for depositing the metal including layer 30 includeDC diode type systems, radio frequency (RF) sputtering, magnetronsputtering, and ionized metal plasma (IMP) sputtering. In addition tophysical vapor deposition (PVD) techniques, the p-type work functionmetal layer may also be formed using chemical vapor deposition (CVD) andatomic layer deposition (ALD). The metal including layer 30 is typicallyformed over the source and drain region portions of the fin structure 10directly on the in-situ doped amorphous or polycrystalline semiconductormaterial 25. The metal including layer 30 may have a thickness rangingfrom 2 nm to 20 nm. In another embodiment, the metal including layer 30may have a thickness ranging from 5 nm to 10 nm.

In some embodiments, a photoresist mask may be formed over thesacrificial gate structure 20 prior to depositing the metal includinglayer 30, to obstruct the metal including layer 30 from being formed onthe sacrificial gate structure. In other embodiments, the metalincluding layer 30 may be patterned and etched to remove portions of themetal including layer 30 that are present over the sacrificial gatestructure 30. In other embodiments, the metal including layer 30 may beblanket deposited over the entire structure, wherein the portions of themetal including layer 30 that are formed on dielectric surfaces areremoved, e.g., selectively etched, after the portions of the metalincluding layer 30 that are present on the source and drain regionportions of the fin structure 10 are intermixed with semiconductormaterial to provide the metal semiconductor alloy 35 that is depicted inFIG. 5.

FIG. 5 depicts one embodiment of intermixing the metal element from themetal including layer 30 and the semiconductor element from theselectively grown in-situ doped amorphous or polycrystallinesemiconductor material 25 to form a metal semiconductor alloy 35. Asused herein, a “metal semiconductor alloy” is an alloy of a metal andsemiconductor. In one embodiment, the metal semiconductor alloy is asilicide. A “silicide” is an alloy of a metal and silicon. Examples ofsilicides suitable for metal semiconductor alloy 35 that is formed onthe source and drain region portions of the fin structure 10 includesilicides having any of the aforementioned metals of the metal layer 30,including, but not limited to, nickel silicide (NiSi_(x)), erbiumsilicide, nickel platinum silicide (NiPt_(y)Si_(x)), platinum silicide(PtSi), cobalt silicide (CoSi_(x)), tantalum silicide (TaSi_(x)),titanium silicide (TiSi_(x)) and combinations thereof. It is noted thatthe metal semiconductor alloy 35 is not limited to only silicides, suchas the above provided examples. Other silicides have also beencontemplated for use as the metal semiconductor alloy 35, as well asgermanides and other alloys of semiconductor and metal elements. In someembodiments, the metal semiconductor alloy 35 may also include analloying additive including, but not limited to, Pt, Pd, Re, W orcombinations thereof.

In some embodiments, intermixing at least one metal element from themetal layer 30 and at least one semiconductor element from the finstructures 10 to provide a metal semiconductor alloy 35 on the sidewallsand upper surface of the source region portion and the drain regionportion of the fin structures 10 is provided by thermal diffusion. Insome embodiments, the thermal diffusion step may include, but is notlimited to, rapid thermal annealing, furnace annealing, laser annealingand combinations thereof. In one embodiment, the thermal diffusion iscompleted at a first temperature ranging from 350° C. to 600° C. for atime period ranging from 1 second to 90 seconds. In some embodiments,the thermal annealing process for forming the metal semiconductor alloy35 includes a second annealing step at a higher second temperature thatranges from 600° C. to 800° C.

The metal semiconductor alloy 35 may have a thickness ranging from 5 nmto 35 nm. In another embodiment, the metal semiconductor alloy 35 mayhave a thickness ranging from 10 nm to 25 nm.

The portion of the metal including layer 30 that intermixes with thein-situ doped amorphous or polycrystalline semiconductor material 25 isthe portion of the metal including layer 30 that provides the metalsemiconductor alloy 35, and the portion of the metal including layer 30that does not intermix with the in-situ doped amorphous orpolycrystalline semiconductor material 25 may be referred to as thenon-reacted portion of the metal including layer 30. In someembodiments, after forming the metal semiconductor alloy 35, thenon-reacted portion of the metal including layer 30 is removed. Thenon-reacted portion of the metal including layer 30 may be removed usingan etch that is selective to the metal semiconductor alloy 35. The term“selective” as used to describe a material removal process denotes thatthe rate of material removal for a first material is greater than therate of removal for at least another material of the structure to whichthe material removal process is being applied. For example, in oneembodiment, a selective etch may include an etch chemistry that removesa first material selectively to a second material by a ratio of 100:1 orgreater. The etch process for removing the non-reacted portions of themetal layer may be an anisotropic etch or an isotropic etch. In someexamples, the etch process may be a wet chemical etch, reactive ion etch(RIE), plasma etch, laser etch and combinations thereof.

Forming the metal semiconductor alloy 35 by intermixing the metalelements from the metal including layer 30 and the semiconductorelements from the amorphous or polycrystalline semiconductor material 25controls diffusion of the metal elements to obstruct the diffusion ofthe metal elements from reaching the core of the fin structure 10 thatis composed of single crystal semiconductor material. Because metalelements, such as nickel (Ni), diffuse much faster in the amorphous orpolycrystalline semiconductor material 25 much faster than in thesingle-crystalline fin structure 10, the metal element, e.g., nickel(Ni), diffuses and reacts with the amorphous layer or polycrystallinesemiconductor material 25 and then stops once it reaches thesingle-crystalline material of the fin structure 10. In this manner, themetal semiconductor alloy 35 formed in accordance with the disclosedmethods is self-limiting. The diffusion characteristics provided by themethods and structures disclosed herein results in only the amorphouslayer or polycrystalline semiconductor material 25 being converted to ametal semiconductor alloy 35, while the single-crystalline fin structure10 remains as the semiconductor core. By obstructing the metal elementsfrom diffusing into the single-crystal fin structure 10, the methods andstructures allow for the formation of metal semiconductor alloy contactstructures on fin structures 10 without converting the entire finstructure 10 into a metal semiconductor alloy 35.

In some embodiments, the core of the fin structure 10 of the singlecrystal semiconductor material is substantially free of the metalelements from the metal layer 30. By “substantially free” it is meantthat there is no metal from the metal including layer 30 in the core ofthe fin structure 10. The metal elements from the metal including layer30 react with the amorphous or polycrystalline semiconductor material 25so that there is no further propagation of the metal elements from themetal including layer 30 during the formation of the metal semiconductoralloy 35 beyond the amorphous or polycrystalline semiconductor material25. More specifically, in some embodiments, the metal elements from themetal including layer 30 do not diffuse past the interface between theamorphous or polycrystalline semiconductor material 25 and the finstructure 10. Therefore, the metal semiconductor alloy contacts 35 arein direct contact with the core of the fin structure 10 that is composedof the single crystalline semiconductor material, in which there is nometal from the metal semiconductor alloy contacts present in the core ofthe fin structure 10.

The core of the single-crystalline fin structure 10 may have a widthdimension ranging from 2 nm to 10 nm. In another embodiment, the core ofthe single-crystalline fin structure 10 may have a width dimensionranging from 3 nm to 8 nm. The core of the single-crystalline finstructure 10 may have a height ranging from 5 nm to 200 nm. In anotherembodiment, the core of the single-crystalline fin structure 10 may havea height ranging from 20 nm to 50 nm. The benefit of having a fin coreof a semiconductor material having a single crystal crystallinestructure, as opposed to the core of the fin structure being convertedto a metal semiconductor alloy, is to reduce the contact resistance ofthe metal semiconductor alloy 35 to the fin structure 10. This isparticularly beneficial for the fin structures 10 having a thickness ofabout 8 nm or less.

FIG. 6 depicts one embodiment of removing the sacrificial gate structure20 and forming a functional gate structure 40 on the channel regionportion of the fin structure 10. In some embodiments, the sacrificialgate structure 20 may be removed by a selective etch process thatremoves the sacrificial gate structure 20 selectively to the channelregion of the fin structure 10, the gate sidewall spacer 23 and themetal semiconductor alloy 35 that is present on the source and drainregion portions of the fin structure 10. The sacrificial gate structure20 may be removed using a wet or dry etch process. In one embodiment,the sacrificial gate structure 20 is removed by reactive ion etch (RIE).

The functional gate structure 40 may be formed in the space previouslyoccupied by the sacrificial gate structure 20. The functional gatestructure 40 may include at least one gate conductor 42 and at least onegate dielectric 41, wherein the gate dielectric 41 is positioned betweenthe gate conductor 42 and the channel region portion of the finstructures 10.

The gate dielectric 41 may be formed by a deposition process such as,e.g., chemical vapor deposition (CVD), plasma enhanced CVD (PECVD),metal organic chemical vapor deposition (MOCVD), atomic layer deposition(ALD), evaporation, chemical solution deposition and other likedeposition processes. The gate dielectric 41 may also be formedutilizing a thermal growth process, such as thermal oxidation. In someembodiments, the gate dielectric 41 may be formed on the sidewalls ofthe gate sidewall spacer 23 and the channel portion of the fin structure10.

The gate dielectric 41 may be comprised of an insulating material havinga dielectric constant of about 4.0 or greater. In another embodiment,the gate dielectric 41 is comprised of an insulating material having adielectric constant greater than 7.0. The dielectric constants mentionedherein are relative to a vacuum. In one embodiment, the gate dielectric41 employed in the present disclosure includes, but is not limited to,an oxide, nitride, oxynitride and/or silicates including metalsilicates, aluminates, titanates and nitrides. In one example, when thegate dielectric 41 is comprised of an oxide, the oxide may be selectedfrom the group including, but not limited to, SiO₂, HfO₂, ZrO₂, Al₂O₃,TiO₂, La₂O₃, SrTiO₃, LaAlO₃, Y₂O₃ and mixture thereof. The physicalthickness of the gate dielectric 41 may vary, but typically, the gatedielectric 41 has a thickness from 1 nm to 10 nm. In another embodiment,the gate dielectric 41 has a thickness from 1 nm to 3 nm.

After forming the material layer for the gate dielectric 41, aconductive material is deposited on the gate dielectric 41 filling thespace between the gate sidewall spacers 23 to form the gate conductor 42of functional gate structure 40. The gate conductor 42 may be formedutilizing a deposition process, such as physical vapor deposition (PVD),chemical vapor deposition (CVD) or evaporation. The conductive materialmay comprise polysilicon, silicon germanium (SiGe), a silicide, a metalor a metal-silicon-nitride, such as Ta—Si—N. Examples of metals that canbe used as the conductive material include, but are not limited to, Al,W, Cu, and Ti or other like conductive metals. The layer of conductivematerial for the gate conductor 42 may be doped, e.g., n-type doped, orundoped.

Interconnects may also be formed to the metal semiconductor alloy 35that is present on the source and drain regions of the fin structure 10.Forming the interconnects may begin with forming an interleveldielectric layer over the source and drain region portions of the finstructure 10, and forming an opening through the interlevel dielectriclayer to expose the metal semiconductor alloy 35 that is present on thesource and drain region portions of the fin structure 10. In a followingprocess step, the interconnects may be formed by forming an electricallyconductive material, such as a metal, in the opening through theinterlevel dielectric layer so that the interconnect is in electricalcommunication with the metal semiconductor alloy 35.

The above described replacement gate process for forming the functionalgate structure 40 may also be referred to as “gate last” process flow.It is noted that the present disclosure is not limited to only gate lastprocess flows. For example, a “gate first” process flow is equallyapplicable to the above method for forming a metal semiconductor alloy35. In a gate first process flow, a functional gate structure is formedprior to forming the source and drain regions, wherein the functionalgate structure remains in the final structure of the device beingformed.

In another aspect, the present disclosure provides a semiconductordevice, e.g., FinFET semiconductor device, which includes a finstructure 10 comprising a source region, a drain region and a channelregion, wherein the channel region is present between the source regionand the drain region. At least one of the drain region and the sourceregion of the fin structure has a width of 10 nm or less and iscomprised of a single crystalline semiconductor material. A functionalgate structure 40 is present on the channel region of the fin structure10. Metal semiconductor alloy contacts 35 are present on the sourceregion and the drain region of the fin structure, wherein metal elementsfrom the metal semiconductor alloy contacts are not substantiallypresent in the core of the fin structure 10, wherein the cores iscomposed of a semiconductor material having a single crystal crystallinestructure, such as monocrystalline silicon. By “not substantiallypresent” it is meant that there is no metal from the metal semiconductoralloy contacts 35 in the core of the fin structure 10. As describedabove, the metal elements from the metal including layer 30 react withthe amorphous or polycrystalline semiconductor material 25 so that thereis no further propagation of the metal elements beyond the amorphous orpolycrystalline semiconductor material 25. Therefore, the metalsemiconductor alloy contacts 35 are in direct contact with the core ofthe fin structure that is composed of the single crystallinesemiconductor material, in which there is no metal from the metalsemiconductor alloy contacts present in the core of the fin structure.

Methods as described herein may be used in the fabrication of integratedcircuit chips. The resulting integrated circuit chips can be distributedby the fabricator in raw wafer form (that is, as a single wafer that hasmultiple unpackaged chips), as a bare die, or in a packaged form. In thelatter case the chip is mounted in a single chip package (such as aplastic carrier, with leads that are affixed to a motherboard or otherhigher level carrier) or in a multichip package (such as a ceramiccarrier that has either or both surface interconnections or buriedinterconnections). In any case the chip is then integrated with otherchips, discrete circuit elements, and/or other signal processing devicesas part of either (a) an intermediate product, such as a motherboard, or(b) an end product. The end product can be any product that includesintegrated circuit chips, ranging from toys and other low-endapplications to advanced computer products having a display, a keyboardor other input device, and a central processor.

While the methods and structures of the present disclosure have beenparticularly shown and described with respect to preferred embodimentsthereof, it will be understood by those skilled in the art that theforegoing and other changes in forms and details may be made withoutdeparting from the spirit and scope of the present disclosure. It istherefore intended that the present disclosure not be limited to theexact forms and details described and illustrated, but fall within thescope of the appended claims.

What is claimed is:
 1. A method of forming a metal semiconductor alloyon a fin structure comprising: forming a semiconductor material layer ofa polycrystalline crystal structure material or amorphous crystalstructure material on a fin structure of a single crystal semiconductormaterial; forming a metal including layer on the semiconductor materiallayer of the polycrystalline crystal structure material or the amorphouscrystal structure material; and intermixing metal elements from themetal including layer with the semiconductor material layer to provide ametal semiconductor alloy contact on the fin structure, wherein a coreof the fin structure of the single crystal semiconductor material issubstantially free of the metal elements from the metal including layer.2. The method of claim 1, wherein the fin structure has a width of 10 nmor less.
 3. The method of claim 1, wherein the semiconductor materiallayer of the polycrystalline crystal structure material or the amorphouscrystal structure material obstructs diffusion of the metal element fromthe metal including layer into the fin structure.
 4. The method of claim1, wherein forming the semiconductor material of the polycrystallinecrystal structure material or the amorphous crystal structure materialon the fin structure comprises growing the semiconductor material usingan in-situ doping deposition method, wherein the in-situ doping methodintroduces a p-type or n-type dopant to the semiconductor material beinggrown to promote the formation of the polycrystalline crystal structurematerial or the amorphous crystal structure material.
 5. The method ofclaim 4, wherein the semiconductor material has a silicon or silicongermanium material composition.
 6. The method of claim 5, wherein thedopant gas for introducing the n-type or p-type dopant to thesemiconductor material in the in-situ doping deposition method isselected from the group consisting of diborane (B₂H₆), phosphine (PH₃),arsine (AsH₃) and a combination thereof.
 7. The method of claim 1,wherein a composition of the metal layer is selected from the groupconsisting of Ni, Ti, Co, Pt, Ta, W, Pt, Pd and other like materials. 8.The method of claim 1, wherein the metal layer is deposited using aphysical vapor deposition method.
 9. The method of claim 1, wherein themetal semiconductor alloy is selected from the group consisting ofnickel silicide (NiSi_(x)), erbium silicide, nickel platinum silicide(NiPt_(y)Si_(x)), platinum silicide (PtSi), cobalt silicide (CoSi_(x)),tantalum silicide (TaSi_(x)), titanium silicide (TiSix) and combinationsthereof.
 10. The method of claim 1, wherein said intermixing of themetal elements from the metal including layer with the semiconductormaterial layer to provide the metal semiconductor alloy contactcomprises an annealing temperature ranging from 350° C. to 800° C. 11.The method of claim 1, wherein the intermixing of the metal element fromthe metal including layer with the semiconductor material layer toprovide the metal semiconductor alloy contact provides a remainingportion of the metal including layer that has not reacted with thesemiconductor material layer, the method further comprising removing theremaining portion of the metal including layer using an etch that isselective to the metal semiconductor alloy contact.
 12. The method ofclaim 1, wherein the core of the fin structure of the single crystalsemiconductor material that is substantially free of the metal elementsfrom the metal including layer is not alloyed with the metal elementsfrom the metal including layer.
 13. A method of forming a metalsemiconductor alloy on a fin structure comprising: forming a gatestructure on a channel portion of the fin structure; forming asemiconductor material layer of a polycrystalline crystal structurematerial or amorphous crystal structure material on source and drainregions portions of the fin structure that have a single crystalsemiconductor material; forming a metal including layer on thesemiconductor material layer of the polycrystalline crystal structurematerial or the amorphous crystal structure material; and intermixingmetal elements from the metal including layer with the semiconductormaterial layer to provide a metal semiconductor alloy contact on the finstructure, wherein a core of the fin structure of the single crystalsemiconductor material is substantially free of the metal elements fromthe metal including layer.
 14. The method of claim 13, wherein the gatestructure is a functional gate structure comprising at least one gatedielectric layer and at least one gate conductor layer.
 15. The methodof claim 13, wherein the forming of the gate structure comprises forminga sacrificial gate structure on the channel portion of the fin structureprior to forming the metal semiconductor alloy contact, and replacingthe sacrificial gate structure with a functional gate structure afterforming the metal semiconductor alloy contact.
 16. The method claim 15,wherein the functional channel includes at least one gate dielectriclayer on the channel portion of the fin structure, and at least one gateconductor on the at least one gate dielectric.
 17. A semiconductordevice comprising: a fin structure comprising a source region, a drainregion and a channel region, the channel region is between the sourceregion, wherein at least the drain region and the source region of thefin structure have a width of 10 nm or less and are comprised of asingle crystalline silicon including material; a gate structure presenton the channel region of the fin structure; and metal semiconductoralloy contacts on the source region and the drain region of the finstructure, wherein metal elements from the metal semiconductor alloycontacts are not present in the source region and the drain region ofthe fin structure.
 18. The semiconductor device of claim 17, wherein themetal semiconductor alloy contact has a composition that is selectedfrom the group consisting of nickel silicide (NiSi_(x)), erbiumsilicide, nickel platinum silicide (NiPt_(y)Si_(x)), platinum silicide(PtSi), cobalt silicide (CoSi_(x)), tantalum silicide (TaSi_(x)),titanium silicide (TiSix) and combinations thereof.
 19. Thesemiconductor device of claim 18, wherein the metal semiconductor alloycontact has a thickness ranging from 5 nm to 35 nm.
 20. Thesemiconductor device of claim 18, wherein the fin structure includingthe source region and the drain region is monocrystalline silicon.